X-ray diagnostics of P-HEMT AlGaAs/InGaAs/GaAs structures

被引：1
|
作者：
Subbotin, I. A.
Chuev, M. A.
Pashaev, E. M.
Imamov, R. M.
Galiev, G. B.
Tikhomirov, S. A.
Kacerovsky, P.
机构：
[1] Russian Acad Sci, AV Shubnikov Crystallog Inst, Moscow 119333, Russia
[2] Russian Acad Sci, Inst Phys & Technol, Moscow 117218, Russia
[3] Russian Res Ctr, IV Kurchatov Atom Energy Inst, Moscow 123182, Russia
[4] Russian Acad Sci, Inst Ultrahigh Frequency Semicond Elect, Moscow 117105, Russia
[5] Acad Sci Czech Republic, Inst Radio Engn & Elect, CR-18251 Prague, Czech Republic
来源：
CRYSTALLOGRAPHY REPORTS | 2007年 / 52卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S1063774507040074
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The structural characteristics of the P-HEMT AlGaAs/InGaAs/GaAs heterostructure have been studied bv high-resolution X-ray diffractometry. The parameters of the heterostructure layers were determined by simultaneous analysis of the X-ray reflection curves for the (004) and ( 113) crystallographic planes. Inter- face diffusion has been established for the InyGa1-y. As quantum well and the Al-x,Ga1-x As spacer layer, which arc characterized by reconstructed profiles of the lattice parameter distribution and anisotropic distribution of random displacements in the layer plane and in the perpendicular direction.
引用
收藏
页码：611 / 617
页数：7
相关论文
共 50 条
  • [21] An X-ray diffraction and electron-microscopic study of the influence of gamma radiation on multilayer AlGaAs/InGaAs/GaAs heterostructures
    A. V. Bobyl
    A. A. Gutkin
    P. N. Brunkov
    I. A. Zamoryanskaya
    M. A. Yagovkina
    Yu. G. Musikhin
    D. A. Sakseev
    S. G. Konnikov
    N. A. Maleev
    V. M. Ustinov
    P. S. Kopjev
    V. T. Punin
    R. I. Ilkaev
    Zh. I. Alferov
    Semiconductors, 2006, 40 : 687 - 690
  • [22] An X-ray diffraction and electron-microscopic study of the influence of gamma radiation on multilayer AlGaAs/InGaAs/GaAs heterostructures
    Bobyl, AV
    Gutkin, AA
    Brunkov, PN
    Zamoryanskaya, IA
    Yagovkina, MA
    Musikhin, YG
    Sakseev, DA
    Konnikov, SG
    Maleev, NA
    Ustinov, VM
    Kopjev, PS
    Punin, VT
    Ilkaev, RI
    Alferov, ZI
    SEMICONDUCTORS, 2006, 40 (06) : 687 - 690
  • [23] COMPARISON OF OMVPE GROWN GAAS/ALGAAS AND GAAS/INGAP HEMT AND PHEMT STRUCTURES
    JONES, KA
    LAREAU, RT
    MONAHAN, T
    FLEMISH, JR
    PFEFFER, RL
    SHERRIFF, RE
    LITTON, CW
    JONES, RL
    STUTZ, CE
    LOOK, DC
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) : 1641 - 1648
  • [24] GaAs structures for X-ray imaging detectors
    Ayzenshtat, GI
    Bakin, NN
    Budnitsky, DL
    Drugova, EP
    Germogenov, VP
    Khludkov, SS
    Koretskaya, OB
    Okaevich, LS
    Porokhovnichenko, LP
    Potapov, AI
    Smith, KM
    Tolbanov, OP
    Tyazhev, AV
    Vilisova, MD
    Vorobiev, AP
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 466 (01): : 25 - 32
  • [25] A 10-Gb/s AlGaAs/InGaAs p-HEMT distributed EA driver with a D-flip-flop for optical fiber links
    Miyashita, M
    Yamamoto, K
    Andoh, K
    Okada, N
    Motoshima, K
    Takemoto, A
    GAAS IC SYMPOSIUM - 22ND ANNUAL, TECHNICAL DIGEST 2000, 2000, : 205 - 208
  • [26] Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown by molecular beam epitaxy and hydrogen treatment
    Lu, LW
    Feng, SL
    Liang, JB
    Wang, ZG
    Wang, J
    Wang, Y
    Ge, WK
    JOURNAL OF CRYSTAL GROWTH, 1996, 169 (04) : 637 - 642
  • [27] High efficiency, high switching speed, AlGaAs/GaAs P-HEMT DC-DC converter for integrated power amplifier modules
    Peng, Han
    Pala, Vipindas
    Wright, Peter
    Chow, T. Paul
    Hella, Mona Mostafa
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2011, 66 (03) : 331 - 348
  • [28] Performances of epitaxial GaAs p/i/n structures for X-ray imaging
    Sun, GC
    Samic, H
    Haguet, V
    Pesant, JC
    Montagne, JP
    Lenoir, M
    Bourgoin, JC
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2002, 487 (1-2): : 102 - 106
  • [29] X-ray analysis of In distribution in molecular beam epitaxy grown InGaAs/GaAs quantum well structures
    Fujimoto, S
    Aoki, M
    Horikoshi, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4A): : 1872 - 1874
  • [30] Study on the structure and characteristics of a novel GaAs pseudomorphic high electron mobility (p-HEMT)
    Hou, Tingting
    Xue, Chenyang
    Liu, Guowen
    Cui, Jing
    ISTM/2009: 8TH INTERNATIONAL SYMPOSIUM ON TEST AND MEASUREMENT, VOLS 1-6, 2009, : 1855 - 1858
12345