Optical absorption measurements of electron quantum confinement in Si(111)-2x1 surface chains

被引:3
|
作者
Bussetti, G. [1 ,2 ]
Violante, A. [1 ,2 ]
Bonanni, B. [1 ,2 ]
Cirilli, S. [1 ,2 ]
Goletti, C. [1 ,2 ]
Chiaradia, P. [1 ,2 ]
Chiarotti, G. [1 ,2 ]
Rohlfing, M. [3 ]
机构
[1] Univ Roma Tor Vergata, Dipartimento Fis, NAST, I-00173 Rome, Italy
[2] Univ Roma Tor Vergata, CNISM, I-00173 Rome, Italy
[3] Univ Osnabruck, Fachbereich Phys, D-4500 Osnabruck, Germany
关键词
EXCITONS; OXYGEN;
D O I
10.1103/PhysRevB.82.153304
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Optical experiments on the Si(111)-2x1 surface show that the absorption peak due to dangling-bond transitions exhibits a blueshift upon oxygen exposure. The effect is interpreted as due to quantum confinement of surface electrons in pi-bonded chains of atoms, whose length decreases with oxygen uptake (a particle-in-a-box effect, the box being one dimensional). This conclusion is supported by numerical simulation of the optical spectra.
引用
收藏
页数:4
相关论文
共 50 条
  • [41] BUCKLING - AN ESSENTIAL FEATURE OF THE SI(111)2X1 SURFACE GEOMETRY
    FEDER, R
    MONCH, W
    SOLID STATE COMMUNICATIONS, 1984, 50 (04) : 311 - 313
  • [42] MODEL STUDIES OF THE SI(111)2X1 SURFACE BY THE PSEUDOFUNCTION METHOD
    TSAI, MH
    KASOWSKI, RV
    RHODIN, TN
    SURFACE SCIENCE, 1987, 179 (01) : 143 - 152
  • [43] DANGLING BOND STATES FOR A BUCKLED SI(111)2X1 SURFACE
    MUNOZ, A
    FLORES, F
    TEJEDOR, C
    SURFACE SCIENCE, 1987, 182 (03) : 606 - 612
  • [44] SCREENING PROPERTIES OF SURFACE-STATES AT SI(111)2X1
    REINING, L
    DELSOLE, R
    PHYSICAL REVIEW B, 1988, 38 (17): : 12768 - 12771
  • [45] KINK MECHANISM FOR FORMATION OF THE SI(111)-(2X1) RECONSTRUCTED SURFACE
    SPENCE, JCH
    PHYSICAL REVIEW B, 1988, 38 (17): : 12672 - 12674
  • [46] SURFACE ELECTRONIC-STRUCTURE OF CLEAVED SI(111)-(2X1)
    HIMPSEL, FJ
    HEIMANN, P
    EASTMAN, DE
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 351 - 351
  • [47] Self-trapping of the Si(111)-(2x1) surface exciton
    Rohlfing, M
    HIGH PERFORMANCE COMPUTING IN SCIENCE AND ENGINEERING '02, 2003, : 194 - 202
  • [48] SURFACE-PI BONDING IN THE (2X1) RECONSTRUCTION OF SI(111)
    CHATTOPADHYAY, A
    MADHAVAN, PV
    WHITTEN, JL
    FISCHER, CR
    BATRA, IP
    JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM, 1988, 40 : 63 - 78
  • [49] STRUCTURE DETERMINATION OF THE SI(111)-(2X1) SURFACE WITH CHANNELING AND BLOCKING
    TROMP, RM
    SMIT, L
    VANDERVEEN, JF
    PHYSICAL REVIEW B, 1984, 30 (10): : 6235 - 6237
  • [50] DISPERSION AND DIPOLE ACTIVITY OF SURFACE PHONONS ON SI(111) 2X1
    ALERHAND, OL
    MELE, EJ
    PHYSICAL REVIEW B, 1988, 37 (05): : 2536 - 2550