3-D device simulation

被引：0
|
作者：
Castellani-Coulié, K [1 ]
Saigné, F [1 ]
Palau, JM [1 ]
Calvet, MC [1 ]
Dodd, PE [1 ]
Sexton, FW [1 ]
机构：
[1] Univ Montpellier 2, CEM2, F-34095 Montpellier 5, France
来源：
PROCEEDINGS OF THE 7TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS | 2004年 / 536卷
关键词：
D O I：
暂无
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
SOI SRAM cell sensitivity to SEU is studied. Currents and sensitive regions are then considered. Because of the buried oxide, the main part of these results appears to be different to that for bulk technologies.
引用
收藏
页码：235 / 240
页数：6
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