3-D simulation of FINFET

被引：0
|
作者：
Liu, Enfeng [1 ]
Liu, Xiaoyan [1 ]
Han, Ruqi [1 ]
机构：
[1] Inst. of Microelectron., Peking Univ., Beijing 100871, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2002年 / 23卷 / 09期
关键词：
Short channel effect - Sub threshold characteristics;
D O I：
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中图分类号：
学科分类号：
摘要：
引用
收藏
页码：909 / 913
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