Various SEU conditions in SRAM studied by 3-D device simulation

被引：37
|
作者：
Castellani-Coulié, K
Palau, JM
Hubert, G
Calvet, MC
Dodd, PE
Sexton, F
机构：
[1] Univ Montpellier 2, F-34095 Montpellier 05, France
[2] Sandia Natl Labs, Albuquerque, NM 87185 USA
[3] EADS, LV, F-78133 Les Mureaux, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2001年 / 48卷 / 06期
关键词：
critical charge; device simulation; sensitive regions; single-event upset (SEU); SEU mechanisms; SRAM sensitivity;
D O I：
10.1109/23.983153
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Various single-event upset (SEU) conditions are studied by three-dimensional device simulation with the purpose of going deeply into the understanding of the mechanisms governing the SEU sensitivity for a large variety of tracks. The results give a better view of what regions are sensitive. They clearly point out that some generally accepted notions must be revised as considering the normal incidence case to be the most sensitive or neglecting PMOS contribution.
引用
收藏
页码：1931 / 1936
页数：6
相关论文
共 50 条
  • [1] Study of an SOISRAM sensitivity to SEU by 3-D device simulation
    Castellani-Coulié, K
    Sagnes, B
    Saigné, F
    Palau, JM
    Calvet, MC
    Dodd, PE
    Sexton, EW
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (05) : 2799 - 2804
  • [2] Charge sharing study in the case of neutron induced SEU on 130 nm bulk SRAM modeled by 3-D device simulation
    Merelle, T.
    Serre, S.
    Saigne, F.
    Sagnes, B.
    Gasiot, G.
    Roche, P.
    Carriere, T.
    Palau, M. -C.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (04) : 1897 - 1901
  • [3] 3-D device simulation
    Castellani-Coulié, K
    Saigné, F
    Palau, JM
    Calvet, MC
    Dodd, PE
    Sexton, FW
    PROCEEDINGS OF THE 7TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 2004, 536 : 235 - 240
  • [4] Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations
    Roche, Ph.
    Palau, J.M.
    Bruguier, G.
    Tavernier, C.
    Ecoffet, R.
    Gasiot, J.
    IEEE Transactions on Nuclear Science, 1999, 46 (6 I): : 1354 - 1362
  • [5] Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations
    Roche, P
    Palau, JM
    Bruguier, G
    Tavernier, C
    Ecoffet, R
    Gasiot, J
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1999, 46 (06) : 1354 - 1362
  • [6] 3-D simulation of SEU hardening of SiGeHBTs using shared dummy collector
    Varadharajaperumal, Muthubalan
    Niu, Guofu
    Wei, Xiaoyun
    Zhang, Tong
    Cressler, John D.
    Reed, Robert A.
    Marshall, Paul W.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (06) : 2330 - 2337
  • [7] Wavelet adaptivity for 3-d device simulation
    De Marchi, Luca
    Baravelli, Emanuele
    Franze, Francesco
    Speciale, Nicolo
    IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2007, 26 (11) : 1967 - 1977
  • [8] 3-d device modeling for SRAM soft-error immunity and tolerance analysis
    Yamaguchi, K
    Takemura, Y
    Osada, K
    Ishibashi, K
    Saito, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (03) : 378 - 388
  • [9] 3-D device simulation using intelligent solution method
    Kerr, DC
    Mayergoyz, ID
    VLSI DESIGN, 1998, 6 (1-4) : 267 - 272
  • [10] Simulation Study of a 3-D Device Integrating FinFET and UTBFET
    Fahad, Hossain M.
    Hu, Chenming
    Hussain, Muhammad M.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (01) : 83 - 87
12345