Rectifying resistance switching behaviors of SnO2 microsphere films modulated by top electrodes

被引：9

作者：

Yuan, Rongchun ^{[1
]}

Xia, Weiwei ^{[1
]}

Xu, Mengxue ^{[1
]}

Miao, Zhilei ^{[1
]}

Wu, Shudong ^{[1
]}

Zhang, Xiuyun ^{[1
]}

He, Junhui ^{[1
]}

Wang, Qiang ^{[1
]}

机构：

[1] Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R China

来源：

CURRENT APPLIED PHYSICS | 2020年 / 20卷 / 03期

基金：

中国国家自然科学基金;

关键词：

Rectifying resistance switching; SnO2 microspheres film; Selfrectifying; Metal electrodes; RANDOM-ACCESS MEMORY; OXIDE-FILMS; TEMPERATURE; MECHANISMS; LIGHT;

D O I：

10.1016/j.cap.2020.01.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Based on the bipolar resistive switching (RS) characteristics of SnO2 films, we have fabricated a new prototypical device with sandwiched structure of Metal/SnO2/fluorine-doped tin oxide (FTO). The SnO2 microspheres film was grown on FTO glass by template-free hydrothermal synthesis, which was evaporated with various commonly used electrodes such as aluminium (Al), silver (Ag), and gold (Au), respectively. Typical self-rectifying resistance switching behaviors were observed for the RS devices with Al and Au electrodes. However, no obvious rectifying resistance switching behavior was observed for the RS device with Ag electrode. Above results were interpreted by considering the different interface barriers between SnO2 and top metal electrodes. Our current studies pave the ways for modulating the self-rectifying resistance switching properties of resistive memory devices by choosing suitable metal electrodes.

引用

页码：431 / 437

页数：7

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