Lithographic patterning of benzoylacetone modified SnO2 and SnO2:Sb thin films

被引：10
|
作者：
Kololuoma, T
Kärkkäinen, AHO
Tolonen, A
Rantala, JT
机构：
[1] VTT Elect, FIN-90570 Oulu, Finland
[2] Oulu Univ, Dept Chem, FIN-90014 Oulu, Finland
来源：
THIN SOLID FILMS | 2003年 / 440卷 / 1-2期
关键词：
antimony-doped tin dioxide; direct photopatterning; electrical properties;
D O I：
10.1016/S0040-6090(03)00826-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The synthesis of directly UV-photopatternable pure and antimony-doped organo-tin materials is presented. UV photopatternability has been achieved by using the synthesized benzoylacetone modified tin and antimony 2-isopropoxyethoxides. Photopatterned pure and antimony-doped organo-tin films are crystallized by thermal annealing in order to obtain conductive SnO2 and Sb:SnO2 thin films. The molar ratio between benzoylacetone and metal alkoxides has to be 2 in order to obtain crack-free, good-quality structures. The effects of UV irradiation,. increasing antimony doping level and benzoylacetone concentration on the electrical properties of the single-layered films are analyzed. The highest obtained conductivity was 20 S/cm. Benzoylacetone concentration and UV irradiation has only a negligible effect on the film electrical conductivities. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：184 / 189
页数：6
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