Numerical correction for secondary fluorescence across phase boundaries in EPMA

被引：0

作者：

Escuder, J. A. ^{[1
]}

Salvat, F. ^{[1
]}

Llovet, X. ^{[2
]}

Donovan, J. J. ^{[3
]}

机构：

[1] Univ Barcelona, Fac Fis ECM, ES-08028 Barcelona, Spain

[2] Univ Barcelona, Serv Cient Tecn, E-08028 Barcelona, Spain

[3] Univ Oregon, COMCOR, Dept Chem, Eugene, OR 97403 USA

来源：

PROCEEDINGS OF THE 11TH EUROPEAN WORKSHOP OF THE EUROPEAN-MICROBEAM-ANALYSIS-SOCIETY (EMAS) ON MODERN DEVELOPMENTS AND APPLICATIONS IN MICROBEAM ANALYSIS | 2010年 / 7卷

关键词：

MICROPROBE ANALYSIS;

D O I：

10.1088/1757-899X/711/012008

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A fast calculation method to compute secondary fluorescence near phase boundaries in electron probe microanalysis is described. Secondary fluorescence intensities are calculated by numerically integrating the equations that describe the emission of fluorescence by photoelectric absorption of primary X-rays (characteristic and bremsstrahlung) from a couple of two semi-infinite, adjacent materials, when the electron beam impacts on one of them. The reliability of the developed calculation is assessed by comparing calculated fluorescence k-ratios, as functions of the distance of the electron beam to the interface, with experimental data available in the literature and with the results of Monte Carlo simulation using code PENELOPE.

引用

页数：7

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