Low-Frequency Noise in Vertically Stacked Si n-Channel Nanosheet FETs

被引：22

作者：

de Oliveira, Alberto V. ^{[1
]}

Veloso, Anabela ^{[2
]}

Claeys, Cor ^{[3
]}

Horiguchi, Naoto ^{[2
]}

Simoen, Eddy ^{[2
]}

机构：

[1] Univ Tecnol Fed Parana UTFPR, Dept Elect Engn, BR-85902490 Toledo, Brazil

[2] IMEC, B-3001 Heverlee, Belgium

[3] Katholieke Univ Leuven KU Leuven, Dept Elect Engn, B-3001 Heverlee, Belgium

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 03期

关键词：

Carrier number fluctuations; flicker noise; gate-all-around; silicon device; input-referred voltage power spectral density; low-frequency-noise; n-channel; oxide trap density; power spectral density; NANOWIRE TRANSISTORS; 1/F NOISE; ORIENTATION; DENSITY; IMPACT; METAL;

D O I：

10.1109/LED.2020.2968093

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This manuscript presents a systematic low-frequency noise analysis of inversion-mode vertically stacked silicon n-channel nanosheet MOSFETs on bulk wafers. Flicker noise due to carrier number fluctuations is shown as the dominant noise source, which is in line with previous reported studies on gate-all-around (GAA) nanowire nMOSFETs. In addition, the benchmark points out that the vertical stacking approach does not deteriorate the oxide trap density, since its normalized input-referred voltage noise Power Spectral Density at flat-band is lower compared to the data on non-stacked horizontal nanowire nMOSFETs. Another finding is that the Coulomb scattering mechanism dominates the mobility.

引用

页码：317 / 320

页数：4

共 50 条

[41] Low-frequency noise in n-channel metal-oxide-semiconductor field-effect transistors undergoing soft breakdown
Chen, MJ
Kang, TK
Lee, YH
Liu, CH
Chang, YJ
Fu, KY
JOURNAL OF APPLIED PHYSICS, 2001, 89 (01) : 648 - 653
[42] High accuracy measurement of low-frequency noise in front-end P-channel FETs
Re, V
Svelto, F
NUCLEAR PHYSICS B, 1995, : 607 - 612
[43] Low-Frequency Noise of Strained and Non-Strained n-Channel Tri-Gate FinFETs With Different Gate Dielectrics
Lukyanchikova, N.
Garbar, N.
Kudina, V.
Smolanka, A.
Simoen, E.
Claeys, C.
NOISE AND FLUCTUATIONS, 2009, 1129 : 291 - +
[44] Low-frequency noise in porous Si LED
Szentpáli, B
Gottwald, P
Mohácsy, T
Molnár, K
Bársony, I
NOISE IN DEVICES AND CIRCUITS, 2003, 5113 : 398 - 405
[45] Low-frequency noise in narrow channel MOSFETs
Shi, Y
Bu, HM
Yuan, XL
Gu, SL
Shen, B
Han, P
Zhang, R
Zheng, YD
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 1051 - 1053
[46] DC and low a frequency noise analysis of p channel gate all around vertically stacked silicon nanosheets
Cretu, B.
Veloso, A.
Simoen, E.
SOLID-STATE ELECTRONICS, 2022, 194
[47] Low frequency noise in insulated-gate strained-Si n-channel modulation doped field effect transistors
Rumyantsev, Sergey L.
Fobelets, Kristel
Hackbarth, Thomas
Shur, Michael S.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (7A): : 4011 - 4015
[48] ION-IMPLANTED N-CHANNEL INP.IGFET AND ITS LOW-FREQUENCY CHARACTERISTICS
OHMACHI, Y
NISHIOKA, T
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) : 1425 - 1426
[49] Behavior of Low-Frequency Noise in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors for Different Impurity Concentrations
Hettiarachchi, Ranga
Matsuki, Takeo
Feng, Wei
Yamada, Keisaku
Ohmori, Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (10)
[50] Trap identification on n-channel GAA NW FETs
Bordin, A.
Cretu, B.
Carin, R.
Simoen, E.
Hellings, G.
Linten, D.
Claeys, C.
2020 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2020,

← 1 2 3 4 5 →