Low-Frequency Noise of Strained and Non-Strained n-Channel Tri-Gate FinFETs With Different Gate Dielectrics

被引：0
|
作者：
Lukyanchikova, N. [1 ]
Garbar, N. [1 ]
Kudina, V. [1 ]
Smolanka, A. [1 ]
Simoen, E. [2 ]
Claeys, C. [2 ,3 ]
机构：
[1] V Lashkaryov Inst Semicond Phys, Prospect Nauki 45, UA-03028 Kiev, Ukraine
[2] IMEC, B-3001 Leuven, Belgium
[3] Katholieke Univ Leuven, B-3001 Leuven, Belgium
来源：
NOISE AND FLUCTUATIONS | 2009年 / 1129卷
关键词：
Low-Frequency Noise; 1/f noise; high-k dielectric; SOI FinFET; sSOI FinFET;
D O I：
暂无
中图分类号：
Q6 [生物物理学];
学科分类号：
071011 ;
摘要：
The influence of different front gate Hf-based high-k dielectrics (HfSiON/SiO2 and HfO2/SiO2) on the shape of the low-frequency noise spectra for n-channel tri-gate FinFETs processed in standard silicon-on-insulator (SOI) substrates, and global Strained Si Directly On Insulator (sSOI) wafers with/without Selective Epitaxial Grown (SEG) source and drain regions is studied. For different process splits the concentration distributions of slow traps over the thickness of the gate dielectric are estimated and it is shown that these distributions depend on the dielectric type.
引用
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页码：291 / +
页数：2
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