Silicon LEDs in FinFET technology

被引：0

作者：

Piccolo, G. ^{[1
]}

Kuindersma, P. I. ^{[3
]}

Ragnarsson, L-A ^{[2
]}

Hueting, R. J. E. ^{[1
]}

Collaert, N. ^{[2
]}

Schmitz, J. ^{[1
]}

机构：

[1] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

[2] IMEC, Leuven, Belgium

[3] NXP Semicond, Eindhoven, Netherlands

来源：

PROCEEDINGS OF THE 2014 44TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2014) | 2014年

关键词：

Silicon; Silicon on insulator technology; Electro-luminescence; Elemental semiconductors; Light emitting diodes; p-i-n diodes; FinFETs; LED; Carrier injectors; Integrated optics; Near-infrared light emission; Infrared light sources; Silicon Photonics; Nanometric devices;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in finFET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped active light-emitting area. We also propose further improvements to exploit the full potential of this structure.

引用

页码：274 / 277

页数：4

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