Enhanced Optical and Electrical Properties of ITO/Ag/AZO Transparent Conductors for Photoelectric Applications

被引：4
|
作者：
Lee, Gyeong-Nam [1 ]
Machaiah, Ponnamma M. [1 ]
Park, Wang-Hee [1 ]
Kim, Joondong [1 ]
机构：
[1] Incheon Natl Univ, Dept Elect Engn, Incheon 406772, South Korea
来源：
INTERNATIONAL JOURNAL OF PHOTOENERGY | 2017年 / 2017卷
基金：
新加坡国家研究基金会;
关键词：
THIN-FILMS; GRAIN-SIZE; TIN-OXIDE; LAYER; DEPENDENCE; ELECTRODES; TCO;
D O I：
10.1155/2017/8315802
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The enhancement of the optical and electrical properties of TCO films was investigated by depositing different layers of AZO (100 nm), Ag (5 nm)/AZO (95 nm), and ITO (45 nm)/Ag (5 nm)/AZO (50 nm) upon n-Si substrate at room temperature by magnetron sputtering method. The ITO/Ag/AZO device efficiently improved the electrical and optical properties with the low sheet resistance of 2.847 Omega/sq. and an increase in the rectification ratio of 455.60% when compared with AZO and Ag/AZO devices. The combination of ITO/Ag/AZO provided the optimum results in all the electrical and optical properties. These results showed that within the optimized thickness range of 100 nm, compared to AZO and Ag/AZO, ITO/Ag/AZO device showed the improvement for both optical and electrical properties at room temperature.
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页数：9
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