Electrical and optical properties of ITO and ITO:Zr transparent conducting films

被引：34

作者：

Zhang, Bo ^{[1
]}

Dong, Xianping ^{[1
]}

Xu, Xiaofeng ^{[2
]}

Wang, Xinjian ^{[1
]}

Wu, Jiansheng ^{[1
]}

机构：

[1] Shanghai jiao Tong Univ, Sch Mat Sci & Engn, Key Lab Minist Educ High Temp Mat & Tests, Shanghai 200240, Peoples R China

[2] Donghua Univ, Coll Sci, Shanghai 200051, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2007年 / 10卷 / 06期

关键词：

ITO; electrical properties; optical properties; optical band gap;

D O I：

10.1016/j.mssp.2008.03.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ITO and ITO:Zr films were deposited on glass substrates by magnetron sputtering. Electrical and optical properties of the films at different experiment parameters such as substrate temperature, oxygen flow rate and annealing temperature were contrastively studied. The increase in substrate temperature remarkably improves the electrical and optical properties of the films. ITO:Zr films show better quality at low substrate temperature. The excessive oxygen can worsen the optical properties of the films. Better optical-electrical properties of the films can be achieved after the proper annealing treatment. Obvious Burstin-Moss effect can be revealed by transmittance spectra with different parameters, and the direct transition models show the change of optical band gap. ITO:Zr films prepared by co-sputtering show better optical-electrical properties than ITO films. (c) 2008 Elsevier Ltd. All rights reserved.

引用

页码：264 / 269

页数：6

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