A study on the diamond grinding of ultra-thin silicon wafers

被引：52

作者：

Zhou, L. ^{[1
]}

Tian, Y. B. ^{[2
]}

Huang, H. ^{[3
]}

Sato, H. ^{[1
]}

Shimizu, J. ^{[1
]}

机构：

[1] Ibaraki Univ, Dept Intelligent Syst Engn, Hitachi, Ibaraki 3168511, Japan

[2] Ibaraki Univ, VBL, Hitachi, Ibaraki, Japan

[3] Univ Queensland, Sch Mech & Min Engn, Brisbane, Qld, Australia

来源：

PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART B-JOURNAL OF ENGINEERING MANUFACTURE | 2012年 / 226卷 / B1期

基金：

澳大利亚研究理事会;

关键词：

silicon wafer; Thinning process; grain depth of cut; subsurface damage; minimum wafer thickness; SI WAFER; SYSTEM; CMG; TECHNOLOGIES; DEFORMATION;

D O I：

10.1177/0954405411414768

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The demand for ultra-thin silicon wafers has escalated in recent years with the rapid development of miniaturized electronic devices. In this work, diamond grinding for thinning silicon wafers was carried out on an ultra-precision grinding machine. The thinning performance and the minimum wafer thickness were investigated under different grinding conditions. It was found that the grain depth of cut that was used to characterize the overall grinding conditions played an important role in the determination of the final grinding performance. The relationship between the subsurface damage of the ground wafer and the minimum wafer thickness achieved was also revealed.

引用

页码：66 / 75

页数：10

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