Parametric Characterization of Self-Heating in Depletion-Type Si Micro-Ring Modulators

被引：18

作者：

Shin, Myung Jin ^{[1
]}

Ban, Yoojin ^{[1
,2
]}

Yu, Byung-Min ^{[1
]}

Rhim, Jinsoo ^{[1
,3
]}

Zimmermann, Lars ^{[4
]}

Choi, Woo-Young ^{[1
]}

机构：

[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea

[2] IMEC VZW, B-3001 Heverlee, Belgium

[3] Hewlett Packard Labs, Palo Alto, CA 94304 USA

[4] Innovat High Performance Microelect, D-15236 Brandenburg, Germany

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2016年 / 22卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

Si ring modulator; self-heating coefficient; coupled-mode equation; self-heating; FREE-CARRIER ABSORPTION; SILICON;

D O I：

10.1109/JSTQE.2016.2560149

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of self-heating on the static transmission characteristics of depletion-type Si micro-ring modulators (MRMs) is investigated. Self-heating, caused by free-carrier absorption of the input light inside the doped ring waveguide, increases the effective refractive index of the ring waveguide and results in the red-shifted resonance wavelength. This phenomenon is modeled based on the coupled-mode equation with a newly-introduced self-heating coefficient R. The accuracy of our model is confirmed by measurement. In addition, dependence of R on device size and doping concentration is experimentally investigated and the resulting dependence is explained.

引用

页码：116 / 122

页数：7

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