Analysis of Optical and Electrical Tradeoffs of Traveling-Wave Depletion-Type Si Mach-Zehnder Modulators for High-Speed Operation

被引：40

作者：

Petousi, Despoina ^{[1
]}

Zimmermann, Lars ^{[1
]}

Gajda, Andrzej ^{[2
]}

Kroh, Marcel ^{[1
]}

Voigt, Karsten ^{[2
]}

Winzer, Georg ^{[1
]}

Tillack, Bernd ^{[1
]}

Petermann, Klaus ^{[2
]}

机构：

[1] IHP, D-15236 Frankfurt, Oder, Germany

[2] Tech Univ Berlin, Fachgebiet Hochfrequenztech, D-10587 Berlin, Germany

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2015年 / 21卷 / 04期

关键词：

Optical modulation; silicon modulators; high-speed operation; CARRIER-DEPLETION; SILICON;

D O I：

10.1109/JSTQE.2014.2369516

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fundamental limiting factors regarding high-speed performance of broadband depletion-type silicon (Si) Mach-Zehnder modulators (MZMs) are studied. Optical and electrical measurements of MZMs with traveling wave electrodes (TWE) reveal significant dependences between optoelectrical bandwidth and design parameters. An equivalent circuit model is implemented to fit measured modulator characteristics. Using the model, the limits of TWE depletion-type Si MZM systems are studied under the requirement of specific driving voltage. By comparing phase shifters with different doping concentration or junction position, we explore the fundamental optical and electrical tradeoffs which are limiting high-speed operation.

引用

页码：199 / 206

页数：8

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