High Speed Static Frequency Divider Design with 111.6 GHz Self-Oscillation Frequency (SOF) in 0.13 μm SiGe BiCMOS Technology

被引：0

作者：

Ali, U. ^{[1
]}

Bober, M. ^{[1
]}

Thiede, A. ^{[1
]}

Awny, A. ^{[2
]}

Fischer, G. ^{[2
]}

机构：

[1] Univ Paderborn, Warburger Str 100, D-33098 Paderborn, Germany

[2] IHP, D-15236 Frankfurt, Oder, Germany

来源：

2015 GERMAN MICROWAVE CONFERENCE | 2015年

关键词：

HBT; latch; SiGe; static frequency dividers;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A speed optimization scheme for static frequency dividers based on master-slave flip-flops is presented. As a proof of the concept, the design of a divide by two static frequency divider in 0.13 mu m SiGe BiCMOS technology (with f(t) > 300 GHz and f(max) > 450 GHz) is reported. The circuit exhibits the highest self-oscillation frequency (SOF) of 111.6 GHz among the existing SiGe technology based static frequency dividers. With single-ended sine wave clock input, divider is operational from 6 to 128.7 GHz (limited by measurement equipment). At dual power supply with V-cc = 3 V and V-ee = -1.9 V, the circuit consumes 40 mA per latch.

引用

页码：241 / 243

页数：3

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