Accurate modeling of Ni/6H-SiC Schottky barrier diodes (SBD) forward characteristics at high current densities

被引：0

作者：

Brezeanu, G ^{[1
]}

Badila, M ^{[1
]}

Tudor, B ^{[1
]}

Millan, J ^{[1
]}

Godignon, P ^{[1
]}

Locatelli, ML ^{[1
]}

Chante, JP ^{[1
]}

Amaratunga, G ^{[1
]}

Udrea, F ^{[1
]}

Mihaila, A ^{[1
]}

机构：

[1] Univ Politehn Bucharest, Bucharest, Romania

来源：

2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS | 2000年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An accurate modeling and complete parameters extraction of the forward characteristics of the Ni/6H-SiC Scottky barrier diodes (SBD) for high level current densities are presented The model takes into account the high level injection effects of the excess majority cariers and current dependence of the series resistance. Direct extraction of the large bias SBD parameters is carried out. A very good agreement between the simulated forward curves using extracted parameters and measured data up to 500 A/cm(2) is obtained.

引用

页码：193 / 196

页数：4

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