4H-SiC junction-barrier Schottky diodes with high forward current densities

4H-SiC junction-barrier Schottky (JBS) diodes blocking 1000 V have been fabricated. I-V characteristics have been evaluated at room temperature and 255 degreesC in comparison with the Schottky barrier (SB) and pin diodes fabricated on the same wafer. While the low reverse leakage confirms the functioning of JBS, the high forward current densities of 630 and 210 A cm(-2) at 4.0 V at room temperature and 255 degreesC, respectively, with only similar to 20% reduction from those of the SE diodes, clearly demonstrate that the SiC JBS diodes can be fabricated with acceptable sacrifice in the forward current capacities.