Characterization of light-emitting diodes based on InAsSbP/InAsSb structures grown by metal-organic vapor-phase epitaxy

被引：8

作者：

Zotova, NV ^{[1
]}

Kizhaev, SS ^{[1
]}

Molchanov, SS ^{[1
]}

Voronina, TI ^{[1
]}

Lagunova, TS ^{[1
]}

Pushnyi, BV ^{[1
]}

Yakovlev, YP ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2003年 / 37卷 / 08期

关键词：

D O I：

10.1134/1.1601666

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Light-emitting diodes for the wavelength range lambda = 3.3-4.5 mum were fabricated on the basis of InAsSbP/InAsSb heterostructures grown by metal-organic vapor-phase epitaxy. The use of vapor-phase epitaxy made it possible to appreciably increase the phosphorus content in barrier layers (up to 50%) in comparison with that attainable in the case of liquid-phase epitaxy; correspondingly, it was possible to improve confinement of charge carriers in the active region of the structures. Photoluminescent properties of InAsSb layers, electroluminescent properties of light-emitting diodes, and dependences of the emission power on current were studied. Two types of light-emitting diodes were fabricated: (i) with extraction of emission through the substrate (type A) and (ii) with extraction of emission through the epitaxial layer (type B). The light-emitting diodes operating in the pulse mode (with a relative pulse duration of 20) had an emission power of 1.2 mW at room temperature. (C) 2003 MAIK "Nauka / Interperiodica".

引用

页码：955 / 959

页数：5

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