DTMOS Power Switch in 28 nm UTBB FD-SOI Technology

被引：0
|
作者：
Le Coz, J. [1 ]
Pelloux-Prayer, B. [1 ]
Giraud, B. [2 ]
Giner, F. [1 ]
Flatresse, P. [1 ]
机构：
[1] STMicroelectronics, Crolles, France
[2] CEA LETI MINATEC, Grenoble, France
来源：
2013 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2013年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：2
相关论文
共 50 条
  • [41] Effects of the On-Die Decoupling Capacitors on the EME Performance in 28 nm FD-SOI Technology
    Rotigni, Mario
    Merlo, Mauro
    Sanna, Aurora
    Colombo, Paolo
    Castellan, Renato
    Liberali, Valentino
    Barletta, Andrea
    DeChecchi, Roberto
    Skytte, Kristoffer Sander
    [J]. 2019 12TH INTERNATIONAL WORKSHOP ON THE ELECTROMAGNETIC COMPATIBILITY OF INTEGRATED CIRCUITS (EMC COMPO 2019), 2019, : 78 - 80
  • [42] Architecture optimization of SPAD integrated in 28 nm FD-SOI CMOS technology to reduce the DCR
    Issartel, D.
    Gao, S.
    Pittet, P.
    Cellier, R.
    Golanski, D.
    Cathelin, A.
    Calmon, F.
    [J]. SOLID-STATE ELECTRONICS, 2022, 191
  • [43] Electronic circuit design for RF energy harvesting using 28 nm FD-SOI technology
    Awad, M.
    Benech, P.
    Duchamp, J. M.
    [J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2018, 60 (06) : 1349 - 1353
  • [44] A Reconfigurable 2.4GHz Power Amplifier for Polar Transmitters in 28nm FD-SOI CMOS technology
    Gkoutis, Panagiotis
    Kolios, Vasilis
    Kalivas, Grigorios
    [J]. 2019 27TH TELECOMMUNICATIONS FORUM (TELFOR 2019), 2019, : 474 - 477
  • [45] Class AB Base-Band Amplifier Design with Body Biasing in 28nm UTBB FD-SOI CMOS
    Videnovic-Misic, Mirjana
    Cathelin, Philippe
    Cathelin, Andreia
    Nikolic, Borivoje
    [J]. 2017 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S), 2017,
  • [46] Avalanche Transient Simulations of SPAD integrated in 28nm FD-SOI CMOS Technology
    Issartel, D.
    Gao, S.
    Hagen, S.
    Pittet, P.
    Cellier, R.
    Golanski, D.
    Cathelin, A.
    Calmon, F.
    [J]. 2021 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2021,
  • [47] A 6-Wire Plug and Play Clockless Distributed On-Chip-Sensor Network in 28 nm UTBB FD-SOI
    Renaudin, Marc
    Bouzafour, Aymane
    Engels, Sylvain
    Wilson, Robin
    [J]. JOURNAL OF LOW POWER ELECTRONICS, 2018, 14 (03) : 404 - 413
  • [48] Temperature dependence of ESD effects on 28 nm FD-SOI MOSFETs
    Xiao, Yiping
    Liu, Chaoming
    Zhang, Yanqing
    Qi, Chunhua
    Ma, Guoliang
    Wang, Tianqi
    Huo, Mingxue
    [J]. ENGINEERING REPORTS, 2024, 6 (03)
  • [49] Reconfigurable NAND/NOR logic gates in 28 nm HKMG and 22 nm FD-SOI FeFET technology
    Breyer, E. T.
    Mulaosmanovic, H.
    Mikolajick, T.
    Slesazeck, S.
    [J]. 2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2017,
  • [50] Electrostatics and channel coupling on 28 nm FD-SOI for cryogenic applications
    Paz, Bruna Cardoso
    Casse, Mikael
    Haendler, Sebastien
    Juge, Andre
    Vincent, Emmanuel
    Galy, Philippe
    Arnaud, Franck
    Ghibaudo, Gerard
    Vinet, Maud
    de Franceschi, Silvano
    Meunier, Tristan
    Gaillard, Fred
    [J]. 2020 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2020,
12345