Energy distribution of interface traps in germanium metal-oxidesemiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility

被引：9
|
作者：
Xie, Ruilong [1 ]
Wu, Nan [1 ]
Shen, Chen [1 ]
Zhu, Chunxiang [1 ]
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab SNDL, Singapore 119260, Singapore
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 08期
关键词：
D O I：
10.1063/1.2976632
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The energy distribution of interface trap density (D-it) in HfO2 gated germanium metal-oxide-semiconductor field effect transistors (MOSFETs) is investigated by using charge pumping method with variable rise/fall-time measurement. Our results reveal that a high density of interface traps is present in the upper half of the Ge bandgap. As a result, the inversion-layer electron mobility of Ge n-channel MOSFETs was significantly degraded by the Coulomb scatterings. These results are also consistent with the abnormal capacitance-voltage (C-V) characteristics of Ge MOS capacitors. (C) 2008 American Institute of Physics.
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