Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

Single-crystal Ge nanowires are synthesized by a low-temperature (275 degreesC) chemical vapor deposition (CVD) method. Boron doped p-type GeNW field-effect transistors (FETs) with back-gates and thin SiO2 (10 nm) gate insulators are constructed. Hole mobility higher than 600 cm2/V s is observed in these devices, suggesting high quality and excellent electrical properties of as-grown Ge wires. In addition, integration of high-kappa HfO2 (12 nm) gate dielectric into nanowire FETs with top-gates is accomplished with promising device characteristics obtained. The nanowire synthesis and device fabrication steps are all performed below 400 degreesC, opening a possibility of building three-dimensional electronics with CVD-derived Ge nanowires. (C) 2003 American Institute of Physics.