Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs

被引：4
|
作者：
Kelly, DQ
Dey, S
Onsongo, D
Banerjee, SK
机构：
[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA
[2] IBM Microelect, Semicond Res & Dev Ctr, Hopewell Jct, NY 12533 USA
来源：
MICROELECTRONICS RELIABILITY | 2005年 / 45卷 / 7-8期
关键词：
D O I：
10.1016/j.microrel.2005.01.011
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Tensile-strained Si on relaxed Si1-xGex buffers has emerged as an important channel material for improving CMOS performance. The ability of tensile-strained Si to dramatically improve MOSFET drive currents has received much attention in the literature in recent years, but little is known about its reliability characteristics. In this review we discuss some of the issues that should be considered in the analysis of hot-electron reliability of strained Si n-channel MOSFETs. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1033 / 1040
页数：8
相关论文
共 50 条
  • [41] Enhanced hot-electron performance of strained SiNMOS over unstrained Si
    Kelly, DQ
    Onsongo, D
    Dey, S
    Wise, R
    Cleavelin, R
    Banerjee, SK
    2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 2004, : 455 - 462
  • [42] A MODEL FOR AC HOT-CARRIER DEGRADATION IN N-CHANNEL MOSFETS
    MISTRY, K
    DOYLE, B
    IEEE ELECTRON DEVICE LETTERS, 1991, 12 (09) : 492 - 494
  • [43] ANNEALING CHARACTERISTICS OF HOT CARRIER INDUCED DAMAGE IN N-CHANNEL MOSFETS
    DAS, NC
    DUGGAN, PWC
    NATHAN, V
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1992, 73 (06) : 1201 - 1213
  • [44] The effects of channel boron-doping on the performance and hot electron reliability of N-channel trend UMOSFETs
    Suliman, SA
    Awadelkarim, OO
    Fonash, SJ
    Dolny, GM
    Hao, J
    Ridley, RS
    Knoedler, CM
    SOLID-STATE ELECTRONICS, 2001, 45 (05) : 655 - 661
  • [45] HOT-ELECTRON-INDUCED INTERFACE STATE GENERATION IN N-CHANNEL MOSFETS AT 77-K
    VONBRUNS, SL
    ANDERSON, RL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (01) : 75 - 82
  • [46] HOT-ELECTRON-INDUCED DEGRADATION OF CONVENTIONAL, MINIMUM OVERLAP, LDD AND DDD N-CHANNEL MOSFETS
    LIOU, TI
    TENG, CS
    MERRILL, RB
    IEEE CIRCUITS AND DEVICES MAGAZINE, 1988, 4 (02): : 9 - 15
  • [47] CORRELATION BETWEEN CHANNEL HOT-ELECTRON DEGRADATION AND RADIATION-INDUCED INTERFACE TRAPPING IN N-CHANNEL LDD DEVICES
    HUANG, DH
    KING, EE
    WANG, JJ
    ORMOND, R
    PALKUTI, LJ
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1991, 38 (06) : 1336 - 1341
  • [48] EFFECTS OF HOT-CARRIER TRAPPING IN N-CHANNEL AND P-CHANNEL MOSFETS
    NG, KK
    TAYLOR, GW
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 871 - 876
  • [49] The application of a direct parameter extraction strategy to hot-carrier reliability simulation of n-channel LDD MOSFETs
    Minehane, S
    Meehan, A
    OSullivan, P
    Mathewson, A
    Mason, B
    1996 INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 1996, : 20 - 26
  • [50] EFFECTS OF HOT-CARRIER TRAPPING IN N-CHANNEL AND P-CHANNEL MOSFETS
    NG, KK
    TAYLOR, GW
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) : 1701 - 1701
12345