Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs

被引：4

作者：

Kelly, DQ

Dey, S

Onsongo, D

Banerjee, SK

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

[2] IBM Microelect, Semicond Res & Dev Ctr, Hopewell Jct, NY 12533 USA

来源：

MICROELECTRONICS RELIABILITY | 2005年 / 45卷 / 7-8期

关键词：

D O I：

10.1016/j.microrel.2005.01.011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tensile-strained Si on relaxed Si1-xGex buffers has emerged as an important channel material for improving CMOS performance. The ability of tensile-strained Si to dramatically improve MOSFET drive currents has received much attention in the literature in recent years, but little is known about its reliability characteristics. In this review we discuss some of the issues that should be considered in the analysis of hot-electron reliability of strained Si n-channel MOSFETs. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1033 / 1040

页数：8

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