AlGaN Nanowire Photonic Crystals: Design, Epitaxy, and High Efficiency Deep UV LEDs

被引：0
|
作者：
Liu, Xianhe [1 ,2 ]
Le, Binh H. [2 ]
Mashooq, Kishwar [1 ]
Mi, Zetian [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, 1301 Beal Ave, Ann Arbor, MI 48109 USA
[2] McGill Univ, Dept Elect & Comp Engn, 3480 Univ St, Montreal, PQ H3A 0E9, Canada
来源：
2018 IEEE PHOTONICS CONFERENCE (IPC) | 2018年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the design and epitaxy of AlGaN nanowire photonic crystal LEDs. The light extraction efficiency can, in principle, reach >90% for TM polarized emission. We have demonstrated AlGaN nanowire photonic crystal LEDs at 280 nm with output power similar to 0.9 W/cm(2) at 250 A/cm(2).
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页数：2
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