共 50 条
- [41] Device performance improvement based on transient enhanced diffusion suppression in the deep sub-quarter micron scale Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (5 B): : 2172 - 2176
- [42] Lithographic performance at sub-quarter micron using DUV stepper with off-axis illumination technology OPTICAL MICROLITHOGRAPHY IX, 1996, 2726 : 94 - 101
- [44] RECENT DEVELOPMENTS FOR SUB-QUARTER MICROMETER FABRICATION JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12B): : 4520 - 4524
- [45] Low-resistivity noble integrated clustered electrode (NICE) WSix polycide and its application to a deep sub-quarter micron CMOS INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, : 119 - 122
- [46] Accurate doping profile determination using TED/QM models extensible to sub-quarter micron nMOSFETs IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 811 - 814
- [47] Study of Cu contamination during copper integration in a Dual Damascene architecture for sub-quarter micron technology PROCEEDINGS OF THE IEEE 1998 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 1998, : 232 - 234
- [48] Device performance improvement based on transient enhanced diffusion suppression in the deep sub-quarter micron scale JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (4B): : 2172 - 2176
- [49] Sub-quarter micron logic-gate-pattern fabrication using halftone phase-shifting masks Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 12 B (7504-7511):
- [50] A highly reliable self-planarizing low-k intermetal dielectric for sub-quarter micron interconnects INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, : 785 - 788