Hot Carrier Reliability Characterization in Consideration of Self-Heating in FinFET Technology

被引：0

作者：

Jin, Minjung ^{[1
]}

Liu, Changze ^{[1
]}

Kim, Jinju ^{[1
]}

Kim, Jungin ^{[1
]}

Choo, Seungjin ^{[1
]}

Kim, Yoohwan ^{[1
]}

Shim, Hyewon ^{[1
]}

Zhang, Lijie ^{[2
]}

Nam, Kabjin ^{[2
]}

Park, Jongwoo ^{[1
]}

Pae, Sangwoo ^{[1
]}

Lee, Haebum ^{[1
]}

机构：

[1] Samsung Elect, Technol Reliabil Qual & Reliabil Team, Syst LSI Div, 24 Nongseo Dong Giheung Gu, Yongin 446711, Gyeonggi Do, South Korea

[2] Samsung Elect, SRD Ctr, 24 Nongseo Dong Giheung Gu, Yongin 446711, Gyeonggi Do, South Korea

来源：

2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2016年

关键词：

FinFET; HCI; Self-heating; Reliability; NBTI;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A severity of hot carrier injection (HCI) in PFET becomes worse than NFET at elevated temperatures. This new observation is further found to be due to the coupled self-heating effects (SHE) during DC HCI stress (also a higher Ea in PFET HCI), rather than the negative bias temperature instability (NBTI) effect during HCI stress. Furthermore, in order to guarantee the precise estimation of HCI under circuit level AC condition, a new empirical HCI lifetime model decoupled from the SHE is proposed, which is further verified by the Si data from nanosecond pulsed waveform HCI stress and Ring Oscillator stress results.

引用

页数：5

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