HCI lifetime correction based on self-heating characterization for SOI technology

被引：3
|
作者：
Roux, Julien-Marc [1 ]
Federspiel, Xavier
Roy, D.
Abramowitz, P.
机构：
[1] STMicroelectronics, Crolles2 Alliance R&D Ctr, F-38926 Crolles, France
[2] NXP, F-38926 Crolles, France
[3] Freescale Semicond, Austin, TX 78721 USA
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2007年 / 7卷 / 02期
关键词：
hot carrier injection (HCI); self-heating (SH); silicon-on-insulator (SOI); thermal coefficient resistance (TCR); thermal resistance;
D O I：
10.1109/TDMR.2007.902076
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Self-heating (SH) effects, which were observed during the development of silicon-on-insulator (SOI) technology for high-performance circuits, raise questions concerning the validity of the extrapolation method used for hot carrier injection (HCI). In this paper, we propose a new methodology for lifetime prediction based on DC HCI stress for SOI technology. The SH is quantified using coupled DC HCI stress and gate resistance measurements for different transistor widths. Then, the degradation part due to SH is removed, enabling accurate HCI lifetime prediction when SH effects are present.
引用
收藏
页码：217 / 224
页数：8
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