Effect of linewidth enhancement factor (LEF) on routes to chaos in optically injected semiconductor lasers

被引：2
|
作者：
Al-Hosiny, N. M. [1 ]
机构：
[1] Taif Univ, Dept Phys, Coll Sci, POB 11099, At Taif 21944, Saudi Arabia
来源：
OPTICA APPLICATA | 2021年 / 51卷 / 04期
关键词：
injection locking; chaos; linewidth enhancement factor; routes to chaos; BIFURCATION; SUBJECT; LOCKING;
D O I：
10.37190/oa210412
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The effect of the linewidth enhancement factor (LEF) or alpha-factor on two common routes to chaos (mainly period-doubling and quasi-periodic routes) in optically injected semiconductor laser is theoretically investigated using bifurcation diagrams. The value of the LEF is slightly modified to examine the sensitivity of routes to chaos to any variation in the LEF. Despite the fact that LEF en-hances chaos in the system, both routes are found to be highly insensitive to the variation in the LEF.
引用
收藏
页码：621 / 632
页数：12
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