Linewidth enhancement factor of quantumdot lasers

被引：0
|
作者：
Omar Qasaimeh
机构：
[1] Jordan University of Science and Technology,Department of Electrical Engineering
来源：
Optical and Quantum Electronics | 2005年 / 37卷
关键词：
hole energy spacing; laser; linewidth enhancement factor; quantum dot;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The linewidth enhancement factor (α) of inhomogenously broadened InAs/GaAs quantum dot (QD) lasers is studied taking into account the effect of the multi-discrete QD energy levels for both electrons and holes. The effect of size-fluctuation and the separation between the energy states on α for different applied bias is studied. Very small value of α (∼0.3) is obtained at high-applied bias. This value is smaller than the linewidth enhancement factor in quantum well lasers. An empirical formula for the linewidth enhancement factor is also derived.
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页码：495 / 507
页数：12
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