Sb diffusion in heavily doped Si substrates

被引：1

作者：

Suzuki, K ^{[1
]}

Tashiro, H ^{[1
]}

Aoyama, T ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa, Japan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 01期

关键词：

D O I：

10.1149/1.1391610

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We investigated Sb diffusion in p(-), p(+), and n(+) substrates and determined the diffusion coefficient. We showed that our evaluated diffusion coefficient associated with neutral point defects is lower than the reported values by one order of magnitude, and it provides a better explanation of experimental data over a range of annealing conditions. (C) 1999 The Electrochemical Society. S0013-4651(98)04-042-7. All rights reserved.

引用

页码：336 / 338

页数：3

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