DIFFUSION OF ION-IMPLANTED SN AND SB IN HEAVILY DOPED N-TYPE SILICON

被引：19
|
作者：
ANDERSEN, PE [1 ]
LARSEN, AN [1 ]
TIDEMANDPETERSSON, P [1 ]
WEYER, G [1 ]
机构：
[1] CERN,ISOLDE COLLABORAT,CH-1211 GENEVA 23,SWITZERLAND
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 09期
关键词：
D O I：
10.1063/1.99823
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：755 / 757
页数：3
相关论文
共 50 条
  • [1] Diffusion behavior of ion-implanted n-type dopants in silicon germanium
    Eguchi, S
    Leitz, CW
    Fitzgerald, EA
    Hoyt, JL
    MATERIALS ISSUES IN NOVEL SI-BASED TECHNOLOGY, 2002, 686 : 33 - 38
  • [2] On the diffusion and activation of ion-implanted n-type dopants in germanium
    Simoen, Eddy
    Vanhellemont, Jan
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (10)
  • [3] N-Type, Ion-Implanted Silicon Solar Cells and Modules
    Meier, Daniel L.
    Chandrasekaran, Vinodh
    Davis, H. Preston
    Payne, Adam M.
    Wang, Xiaoyan
    Yelundur, Vijay
    O'Neill, Jon E.
    Ok, Young-Woo
    Zimbardi, Francesco
    Rohatgi, Ajeet
    IEEE JOURNAL OF PHOTOVOLTAICS, 2011, 1 (02): : 123 - 129
  • [4] On the diffusion and activation of ion-implanted n-type dopants in germanium
    Simoen, Eddy
    Vanhellemont, Jan
    Journal of Applied Physics, 2009, 106 (10):
  • [5] ANNEALING CHARACTERISTICS OF N-TYPE DOPANTS IN ION-IMPLANTED SILICON
    CROWDER, BL
    MOREHEAD, FF
    APPLIED PHYSICS LETTERS, 1969, 14 (10) : 313 - &
  • [6] DIFFUSION OF BORON IN HEAVILY DOPED N-TYPE AND P-TYPE SILICON
    WILLOUGHBY, AFW
    EVANS, AGR
    CHAMP, P
    YALLUP, KJ
    GODFREY, DJ
    DOWSETT, MG
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (07) : 2392 - 2397
  • [7] OXIDATION-ENHANCED DIFFUSION OF ION-IMPLANTED BORON IN HEAVILY PHOSPHORUS-DOPED SILICON
    MIYAKE, M
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 711 - 715
  • [8] MAGNETORESISTANCE OF HEAVILY DOPED N-TYPE SILICON
    BALKANSK.M
    GEISMAR, A
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, S 21 : 554 - &
  • [9] MAGNETORESISTANCE IN HEAVILY DOPED N-TYPE SILICON
    TUFTE, ON
    STELZER, EL
    PHYSICAL REVIEW, 1965, 139 (1A): : A265 - &
  • [10] ION-IMPLANTED N-TYPE DIAMOND - ELECTRICAL EVIDENCE
    PRINS, JF
    DIAMOND AND RELATED MATERIALS, 1995, 4 (5-6) : 580 - 585
12345