Optical characterization of GaAs/AlAs short period superlattices

被引：0
|
作者：
Woo, DH [1 ]
Han, IK
Choi, WJ
Lee, S
Kim, HJ
Lee, JI
Kim, SH
Kang, KN
Choi, SG
Kim, YD
Yoo, SD
Aspnes, DE
Rhee, SJ
Woo, JC
机构：
[1] KIST, Photon Res Ctr, Seoul 130650, South Korea
[2] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea
[3] N Carolina State Univ, Dept Phys, Raleigh, NC 27606 USA
[4] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea
来源：
MICROELECTRONIC ENGINEERING | 1998年 / 43-4卷
关键词：
D O I：
10.1016/S0167-9317(98)00173-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present optical studies of a series of GaAs/AlAs short period superlattices grown by molecular beam epitaxy. The structural properties were examined by X-ray diffraction measurements. The quantum confinement of the electronic and the vibronic states were observed in the low temperature photoluminescence and Raman scattering experiments, respectively. Spectroscopic ellipsometric (SE) measurements were also performed. We found a new structure at the lower E-2 peak, which is the best resolution of the E-2 structure in these SLs so far obtained by SE. (C) 1998 Elsevier Science B.V. All rights reserved.
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收藏
页码：265 / 270
页数：6
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