Photocurrent resonances in short-period AlAs/GaAs superlattices in an electric field

被引：3
|
作者：
Alperovich, VL [1 ]
Terekhov, AS
Tkachenko, VA
Tkachenko, OA
Moshegov, NT
Toropov, AI
Yaroshevich, AS
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Novosibirsk 630090, Russia
来源：
PHYSICS OF THE SOLID STATE | 1999年 / 41卷 / 01期
关键词：
D O I：
10.1134/1.1130745
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The photocurrent was measured as a function of the external electric field in short-period AlAs/ GaAs superlattices for various photon energies. Transport resonances, whose positions do not depend on the photon energy, were observed in these dependences together with optical resonances due to interband transitions in Wannier-Stark levels. It is shown that the transport resonances are due to tunneling of photoelectrons from the p-GaAs contact region into the first level in GaAs wells located 2-5 lattice periods from the contact layer. (C) 1999 American Institute of Physics. [S1063-7834(99)03301-8].
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收藏
页码：143 / 147
页数：5
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