Effects of two kinds of intercalated In films on quasi-free-standing monolayer graphene formed above SiC(0001)

被引：14
|
作者：
Kim, Hidong [1 ,2 ,3 ]
Tsogtbaatar, Nyamaa [1 ,2 ]
Tuvdendorj, Bolortsetseg [1 ,2 ]
Lkhagvasuren, Altaibaatar [1 ,2 ]
Seo, Jae M. [1 ,2 ]
机构：
[1] Chonbuk Natl Univ, Dept Phys, Jeonju 54896, South Korea
[2] Chonbuk Natl Univ, Inst Photon & Informat Technol, Jeonju 54896, South Korea
[3] Gwangju Inst Sci & Technol, Ctr Adv Xray Sci, Gwangju 61005, South Korea
来源：
CARBON | 2020年 / 159卷
基金：
新加坡国家研究基金会;
关键词：
ELECTRONIC-PROPERTIES; RECONSTRUCTION; 6H-SIC(0001); GRAPHITE;
D O I：
10.1016/j.carbon.2019.12.032
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The effects of In atoms intercalated between the n-type 6H-SiC(0001) substrate and the (6 root 3 x 6 root 3)R30 degrees zero layer (ZL) on the interface morphology, chemical composition and electron band structure were investigated by scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), core-level/valence-band photoemission spectroscopy (PES) and angle-resolved photoemission spectroscopy (ARPES). As a result of In intercalation, two kinds of ordered In films depending on the thickness of In as well as the annealing temperature were formed under quasi-free-standing monolayer graphene (QFMLG) transformed from ZL. One is a bilayer film, which is stable under 800 degrees C. The other is a monolayer film composed of In adatoms of a (root 3 x root 3)R30 degrees structure, which survives over 800 degrees C. The latter induces electron doping of the QFMLG stronger than the former. In addition, the QFMLG on the (root 3 x root 3)R30 degrees film becomes more n-doped under higher annealing temperature, which is due to a vacancy increment of the In film. (C) 2019 Elsevier Ltd. All rights reserved.
引用
收藏
页码：229 / 235
页数：7
相关论文
共 50 条
  • [21] Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation
    Riedl, C.
    Coletti, C.
    Iwasaki, T.
    Zakharov, A. A.
    Starke, U.
    PHYSICAL REVIEW LETTERS, 2009, 103 (24)
  • [22] Synthesis of quasi-free-standing bilayer graphene nanoribbons on SiC surfaces
    Myriano H. Oliveira, Jr.
    Joao Marcelo J. Lopes
    Timo Schumann
    Lauren A. Galves
    Manfred Ramsteiner
    Katja Berlin
    Achim Trampert
    Henning Riechert
    Nature Communications, 6
  • [23] Self organization of a hexagonal network of quasi-free-standing monolayer graphene nanoribbons
    Murata, Y.
    Takamura, M.
    Kageshima, H.
    Hibino, H.
    PHYSICAL REVIEW B, 2013, 87 (16):
  • [24] Charge carrier concentration and offset voltage in quasi-free-standing monolayer chemical vapor deposition graphene on SiC
    Ciuk, Tymoteusz
    Caban, Piotr
    Strupinski, Wlodek
    CARBON, 2016, 101 : 431 - 438
  • [25] Quantum Hall Effect and Carrier Scattering in Quasi-Free-Standing Monolayer Graphene
    Tanabe, Shinichi
    Takamura, Makoto
    Harada, Yuichi
    Kageshima, Hiroyuki
    Hibino, Hiroki
    APPLIED PHYSICS EXPRESS, 2012, 5 (12)
  • [26] Correlation between morphology and transport properties of quasi-free-standing monolayer graphene
    Murata, Yuya
    Mashoff, Torge
    Takamura, Makoto
    Tanabe, Shinichi
    Hibino, Hiroki
    Beltram, Fabio
    Heun, Stefan
    APPLIED PHYSICS LETTERS, 2014, 105 (22)
  • [27] Direct growth of quasi-free-standing epitaxial graphene on nonpolar SiC surfaces
    Ostler, M.
    Deretzis, I.
    Mammadov, S.
    Giannazzo, F.
    Nicotra, G.
    Spinella, C.
    Seyller, Th.
    La Magna, A.
    PHYSICAL REVIEW B, 2013, 88 (08):
  • [28] Formation of high-quality quasi-free-standing bilayer graphene on SiC(0001) by oxygen intercalation upon annealing in air
    Oliveira, Myriano H., Jr.
    Schumann, Timo
    Fromm, Felix
    Koch, Roland
    Ostler, Markus
    Ramsteiner, Manfred
    Seyller, Thomas
    Lopes, Joao Marcelo J.
    Riechert, Henning
    CARBON, 2013, 52 : 83 - 89
  • [29] Atomic and electronic structure of Si dangling bonds in quasi-free-standing monolayer graphene
    Murata, Yuya
    Cavallucci, Tommaso
    Tozzini, Valentina
    Pavlicek, Niko
    Gross, Leo
    Meyer, Gerhard
    Takamura, Makoto
    Hibino, Hiroki
    Beltram, Fabio
    Heun, Stefan
    NANO RESEARCH, 2018, 11 (02) : 864 - 873
  • [30] Atomic and electronic structure of Si dangling bonds in quasi-free-standing monolayer graphene
    Yuya Murata
    Tommaso Cavallucci
    Valentina Tozzini
    Niko Pavliček
    Leo Gross
    Gerhard Meyer
    Makoto Takamura
    Hiroki Hibino
    Fabio Beltram
    Stefan Heun
    Nano Research, 2018, 11 : 864 - 873
12345