Effects of two kinds of intercalated In films on quasi-free-standing monolayer graphene formed above SiC(0001)

被引：14
|
作者：
Kim, Hidong [1 ,2 ,3 ]
Tsogtbaatar, Nyamaa [1 ,2 ]
Tuvdendorj, Bolortsetseg [1 ,2 ]
Lkhagvasuren, Altaibaatar [1 ,2 ]
Seo, Jae M. [1 ,2 ]
机构：
[1] Chonbuk Natl Univ, Dept Phys, Jeonju 54896, South Korea
[2] Chonbuk Natl Univ, Inst Photon & Informat Technol, Jeonju 54896, South Korea
[3] Gwangju Inst Sci & Technol, Ctr Adv Xray Sci, Gwangju 61005, South Korea
来源：
CARBON | 2020年 / 159卷
基金：
新加坡国家研究基金会;
关键词：
ELECTRONIC-PROPERTIES; RECONSTRUCTION; 6H-SIC(0001); GRAPHITE;
D O I：
10.1016/j.carbon.2019.12.032
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The effects of In atoms intercalated between the n-type 6H-SiC(0001) substrate and the (6 root 3 x 6 root 3)R30 degrees zero layer (ZL) on the interface morphology, chemical composition and electron band structure were investigated by scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), core-level/valence-band photoemission spectroscopy (PES) and angle-resolved photoemission spectroscopy (ARPES). As a result of In intercalation, two kinds of ordered In films depending on the thickness of In as well as the annealing temperature were formed under quasi-free-standing monolayer graphene (QFMLG) transformed from ZL. One is a bilayer film, which is stable under 800 degrees C. The other is a monolayer film composed of In adatoms of a (root 3 x root 3)R30 degrees structure, which survives over 800 degrees C. The latter induces electron doping of the QFMLG stronger than the former. In addition, the QFMLG on the (root 3 x root 3)R30 degrees film becomes more n-doped under higher annealing temperature, which is due to a vacancy increment of the In film. (C) 2019 Elsevier Ltd. All rights reserved.
引用
收藏
页码：229 / 235
页数：7
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