Accuracy evaluation of single-electron shuttle transfer in Si nanowire metal-oxide-semiconductor field-effect transistors

被引：35

作者：

Yamahata, Gento ^{[1
]}

Nishiguchi, Katsuhiko ^{[1
]}

Fujiwara, Akira ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 22期

关键词：

QUANTIZATION; PUMP;

D O I：

10.1063/1.3595683

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on evaluation of transfer accuracy in a single-electron turnstile using silicon nanowire metal-oxide-semiconductor field-effect transistors at 17 K. Single-electron shuttle transfer and single-shot detection of a single electron are used to detect errors of the transfer. Errors for the transfer through an electrostatically formed island are ascribed to thermal processes. We also observed single-electron transfer mediated by a trap level, which exhibits a wide current plateau and a low error rate. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3595683]

引用

页数：3

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