Novel Fast-switching and High-data Retention Phase-change Memory Based on New Ga-Sb-Ge Material

被引：0

作者：

Cheng, H. Y. ^{[1
]}

Chien, W. C. ^{[1
]}

BrightSky, M. ^{[2
]}

Ho, Y. H. ^{[1
]}

Zhu, Y. ^{[2
]}

Ray, A. ^{[2
]}

Bruce, R. ^{[2
]}

Kim, W. ^{[2
]}

Yeh, C. W. ^{[1
]}

Lung, H. L. ^{[1
]}

Lam, C. ^{[2
]}

机构：

[1] Macronix Int Co Ltd, Emerging Cent Lab, 16 Li Hsin Rd,Sci Pk, Hsinchu, Taiwan

[2] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Attempts to improve the retention so far must sacrifice switching speed. This work explores new phase change material based on pseudobinary GaSb-Ge system. The resulting new phase-change material has demonstrated fast switching speed of 80 ns, long endurance of 1G cycles and excellent data retention that survives 250 degrees C-300 hrs. The 10 years-220 degrees C data retention is the best ever reported. It is also the fastest material that can pass the solder bonding criteria for embedded automotive applications.

引用

页数：4

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