Novel Fast-switching and High-data Retention Phase-change Memory Based on New Ga-Sb-Ge Material

被引：0

作者：

Cheng, H. Y. ^{[1
]}

Chien, W. C. ^{[1
]}

BrightSky, M. ^{[2
]}

Ho, Y. H. ^{[1
]}

Zhu, Y. ^{[2
]}

Ray, A. ^{[2
]}

Bruce, R. ^{[2
]}

Kim, W. ^{[2
]}

Yeh, C. W. ^{[1
]}

Lung, H. L. ^{[1
]}

Lam, C. ^{[2
]}

机构：

[1] Macronix Int Co Ltd, Emerging Cent Lab, 16 Li Hsin Rd,Sci Pk, Hsinchu, Taiwan

[2] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Attempts to improve the retention so far must sacrifice switching speed. This work explores new phase change material based on pseudobinary GaSb-Ge system. The resulting new phase-change material has demonstrated fast switching speed of 80 ns, long endurance of 1G cycles and excellent data retention that survives 250 degrees C-300 hrs. The 10 years-220 degrees C data retention is the best ever reported. It is also the fastest material that can pass the solder bonding criteria for embedded automotive applications.

引用

页数：4

共 50 条

[31] Sb7Te3/ZnSb multilayer thin films for high thermal stability and long data retention phase-change memory
Chen, Shiyu
Wu, Weihua
Zhai, Jiwei
Song, Sannian
Song, Zhitang
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2017, 218 : 59 - 63
[32] Potential of Ge-Sb-Te phase-change optical disks for high-data-rate recording
Yamada, N
OPTICAL DATA STORAGE '97, 1997, 3109 : 28 - 37
[33] Sb7Te3/Ge multilayer films for low power and high speed phase-change memory
Chen, Shiyu
Wu, Weihua
Zhai, Jiwei
Song, Sannian
Song, Zhitang
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 32 (06)
[34] Thermal Stress Analysis of Ge1Sb4Te7-Based Phase-Change Memory Devices
Shin, Sangwoo
Kim, Kyung Min
Song, Jiwoon
Kim, Hyung Keun
Choi, Doo Jin
Cho, Hyung Hee
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (03) : 782 - 791
[35] Excellent thermal stability owing to Ge and C doping in Sb2Te-based high-speed phase-change memory
Guo, Tianqi
Song, Sannian
Zheng, Yonghui
Xue, Yuan
Yan, Shuai
Liu, Yuxiang
Li, Tao
Liu, Guangyu
Wang, Yong
Song, Zhitang
Qi, Ming
Feng, Songlin
NANOTECHNOLOGY, 2018, 29 (50)
[36] W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention
Peng, Cheng
Wu, Liangcai
Rao, Feng
Song, Zhitang
Yang, Pingxiong
Song, Hongjia
Ren, Kun
Zhou, Xilin
Zhu, Min
Liu, Bo
Chu, Junhao
APPLIED PHYSICS LETTERS, 2012, 101 (12)
[37] Modeling the Phase-Change Memory Material, Ge2Sb2Te5, with a Machine-Learned Interatomic Potential
Mocanu, Felix C.
Konstantinou, Konstantinos
Lee, Tae Hoon
Bernstein, Noam
Deringer, Volker L.
Csanyi, Gabor
Elliott, Stephen R.
JOURNAL OF PHYSICAL CHEMISTRY B, 2018, 122 (38): : 8998 - 9006
[38] Effect of dielectric material films on crystallization characteristics of Ge2Sb2Te5 phase-change memory film
Nishiuchi, Kenichi
Yamada, Noboru
Kawahara, Katsumi
Kojima, Rie
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (11): : 7421 - 7423
[39] SiC-Doped Ge2Sb2Te5 Phase-Change Material: A Candidate for High-Density Embedded Memory Application
Guo, Tianqi
Song, Sannian
Song, Zhitang
Ji, Xinglong
Xue, Yuan
Chen, Liangliang
Cheng, Yan
Liu, Bo
Wu, Liangcai
Qi, Ming
Feng, Songlin
ADVANCED ELECTRONIC MATERIALS, 2018, 4 (08):
[40] Oxygen-doped Si15Sb85 thin film for good data retention and high speed phase-change memory application
Zhang, Yin
Feng, Jie
Cai, Bingchu
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (04)

← 1 2 3 4 5 →