In situ X-ray diffraction during MOCVD of III-nitrides

被引：2

作者：

Simbrunner, C. ^{[1
]}

Navarro-Quezada, A.

Schmidegg, K.

Bonanni, A.

Kharchenko, A.

Bethke, J.

Lischka, K.

Sitter, H.

机构：

[1] Univ Linz, Inst Solid State & Semicond Phys, A-4040 Linz, Austria

[2] PANalytical BV, Almelo, Netherlands

[3] Univ Gesamthsch Paderborn, Dept Phys, Paderborn, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 08期

关键词：

GROWTH; SUPERLATTICES; ELLIPSOMETRY;

D O I：

10.1002/pssa.200675701

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nowadays Metal Organic Chemical Vapor Deposition (MOCVD) is the most frequently used fabrication process for growing III-V-nitrides. The missing ultra high vacuum (UHV) conditions narrow the window of possible in situ characterization techniques to only optical methods like spectroscopic ellipsometry (SE) and X-ray diffraction. We are able to observe the growing surface simultaneously with a multi wavelength ellipsometer and a X-ray diffraction (XRD) system mounted on an AIXTRON 200 RF-S reactor. Properties like crystal quality, composition, superlattice periodicity and strain relaxation of hexagonal GaN/AlGaN heterostructures are determined in situ using XRD. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2798 / 2803

页数：6

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