In situ X-ray diffraction during MOCVD of III-nitrides: An optimized wobbling compensating evaluation algorithm

被引:7
|
作者
Simbrunner, C. [1 ]
Schmidegg, K.
Bonanni, A.
Kharchenko, A.
Bethke, J.
Woitok, J.
Lischka, K.
Sitter, H.
机构
[1] Univ Linz, Inst Solid State & Semicond Phys, A-4040 Linz, Austria
[2] PANalyt BV, Almelo, Netherlands
[3] Univ Gesamthsch Paderborn, Dept Phys, D-4790 Paderborn, Germany
关键词
in situ characterization; X-ray diffraction; MOCVD; nitride semiconductors;
D O I
10.1016/j.jcrysgro.2006.10.116
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Presently, we are able to measure in situ X-ray diffraction and spectroscopic ellipsometry simultaneously on rotating samples during the deposition process in our AIXTRON 200 RF-S reactor using a commercial available PANalytical Cu ceramic tube as X-ray source. Due to the natural wobbling of the rotating sample, a compensation algorithm is used before adding up single spectra in order to improve signal-to-noise ratio before fitting procedure. The so far used algorithm is based on the detection of peak maxima representing the center of the peak. In this paper we present an improved compensation algorithm based on a symmetric peak shape enabling the calculation of the peak symmetry axes from the center of weight. It is shown that the algorithm improves the resulting peak shapes and is more efficient especially at low diffraction intensities, yielding a higher thickness resolution. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:243 / 245
页数:3
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