In situ X-ray diffraction during MOCVD of III-nitrides

被引：2
|
作者：
Simbrunner, C. [1 ]
Navarro-Quezada, A.
Schmidegg, K.
Bonanni, A.
Kharchenko, A.
Bethke, J.
Lischka, K.
Sitter, H.
机构：
[1] Univ Linz, Inst Solid State & Semicond Phys, A-4040 Linz, Austria
[2] PANalytical BV, Almelo, Netherlands
[3] Univ Gesamthsch Paderborn, Dept Phys, Paderborn, Germany
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 08期
关键词：
GROWTH; SUPERLATTICES; ELLIPSOMETRY;
D O I：
10.1002/pssa.200675701
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nowadays Metal Organic Chemical Vapor Deposition (MOCVD) is the most frequently used fabrication process for growing III-V-nitrides. The missing ultra high vacuum (UHV) conditions narrow the window of possible in situ characterization techniques to only optical methods like spectroscopic ellipsometry (SE) and X-ray diffraction. We are able to observe the growing surface simultaneously with a multi wavelength ellipsometer and a X-ray diffraction (XRD) system mounted on an AIXTRON 200 RF-S reactor. Properties like crystal quality, composition, superlattice periodicity and strain relaxation of hexagonal GaN/AlGaN heterostructures are determined in situ using XRD. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2798 / 2803
页数：6
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