Raman scattering studies on single-crystalline bulk AlN: temperature and pressure dependence of the AlN phonon modes

被引：47
|
作者：
Kuball, M
Hayes, JM
Shi, Y
Edgar, JH
Prins, AD
van Uden, NWA
Dunstan, DJ
机构：
[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England
[2] Kansas State Univ, Dept Chem Engn, Manhattan, KS 66506 USA
[3] Univ London Queen Mary & Westfield Coll, Dept Phys, London E1 4NS, England
来源：
JOURNAL OF CRYSTAL GROWTH | 2001年 / 231卷 / 03期
关键词：
characterization; single crystal growth; nitrides; semiconducting aluminium compounds;
D O I：
10.1016/S0022-0248(01)01469-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report on the Raman analysis of single-crystalline bulk AIN. AIN phonon modes were investigated as a function of temperature and hydrostatic pressure. Phonon decay channels were studied via the AIN Raman linewidth. Mode Gruneisen parameters describing the low-pressure behavior of the AIN phonon modes were determined and used to estimate hydrostatic stress in amber discolored AIN substrates. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：391 / 396
页数：6
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