Electronic structure analysis of threading screw dislocations in 4H-SiC using electron holography

被引：12

作者：

Chung, Suk ^{[1
]}

Berechman, Ronen A. ^{[1
]}

McCartney, Martha R. ^{[2
]}

Skowronski, Marek ^{[1
]}

机构：

[1] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA

[2] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 03期

关键词：

BIAS LEAKAGE CURRENT; SURFACE-DEFECTS; BREAKDOWN; GAN; CHARGE; LIMITS;

D O I：

10.1063/1.3544066

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Off-axis electron holography has been used to map the electrostatic potential distribution of threading screw dislocations in differently n-doped 4H-SiC epitaxial layers. Observed phase contrast indicated the presence of a negatively charged dislocation core. Comparison between experimental and simulated potential profiles indicated that the density of trapped charges increased for a higher doped epilayer. Assuming a single level of the trap at the core, the ionization energy of the trap was calculated to be 0.89 +/- 0.22 eV. (C) 2011 American Institute of Physics. [doi:10.1063/1.3544066]

引用

页数：6

共 50 条

[21] High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayersa
Kamata, I.
Nagano, M.
Tsuchida, H.
Chen, Yi
Dudley, M.
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 305 - +
[22] Formation of epitaxial defects by threading screw dislocations with a morphological feature at the surface of 4° off-axis 4H-SiC substrates
Aigo, T.
Ito, W.
Tsuge, H.
Yashiro, H.
Katsuno, M.
Fujimoto, T.
Yano, T.
SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 629 - 632
[23] Conversion Behavior of Threading Screw Dislocations on C Face with Different Surface Morphology During 4H-SiC Solution Growth
Xiao, Shiyu
Harada, Shunta
Murayama, Kenta
Tagawa, Miho
Ujihara, Toru
CRYSTAL GROWTH & DESIGN, 2016, 16 (11) : 6436 - 6439
[24] Reduction of threading screw dislocations in 4H-SiC crystals by a hybrid method with solution growth and physical vapor transport growth
Mitani, Takeshi
Eto, Kazuma
Komatsu, Naoyoshi
Hayashi, Yuichiro
Suo, Hiromasa
Kato, Tomohisa
JOURNAL OF CRYSTAL GROWTH, 2021, 568
[25] Evolution of threading screw dislocation conversion during solution growth of 4H-SiC
Harada, S.
Yamamoto, Y.
Seki, K.
Horio, A.
Mitsuhashi, T.
Tagawa, M.
Ujihara, T.
APL MATERIALS, 2013, 1 (02):
[26] Interaction of 6H-type Stacking Faults with Threading Screw Dislocations in PVT-grown 4H-SiC Single Crystals
Sato, S.
Fujimoto, T.
Tsuge, H.
Katsuno, M.
Ohashi, W.
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 411 - 414
[27] Sense Determination of c-axis Screw Dislocations in 4H-SiC
Chen, Yi
Huang, XianRong
Dhanaraj, Govindhan
Dudley, Michael
Sanchez, Edward K.
MacMillan, Michael F.
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 297 - +
[28] Dislocation revelation for 4H-SiC by using vaporized NaOH: a possible way to distinguish edge, screw and mixed threading dislocations by etch pit method
Yao, Yong-zhao
Ishikawa, Yukari
Sugawara, Yoshihiro
Sato, Koji
Danno, Katsunori
Suzuki, Hiroshi
Sakamoto, Hidemitsu
Bessho, Takeshi
Yamaguchi, Satoshi
Nishikawa, Koichi
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 346 - +
[29] Microscopic structure of stepwise threading dislocation in 4H-SiC substrate
Ishikawa, Yukari
Sugawara, Yoshihiro
Saitoh, Hiroaki
Danno, Katsunori
Suzuki, Hiroshi
Bessho, Takeshi
Kawai, Yoichiro
Shibata, Noriyoshi
Japanese Journal of Applied Physics, 2012, 51 (4 PART 1)
[30] Microscopic Structure of Stepwise Threading Dislocation in 4H-SiC Substrate
Ishikawa, Yukari
Sugawara, Yoshihiro
Saitoh, Hiroaki
Danno, Katsunori
Suzuki, Hiroshi
Bessho, Takeshi
Kawai, Yoichiro
Shibata, Noriyoshi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (04)

← 1 2 3 4 5 →