Microscopic Structure of Stepwise Threading Dislocation in 4H-SiC Substrate

被引：2

作者：

Ishikawa, Yukari ^{[1
]}

Sugawara, Yoshihiro ^{[1
]}

Saitoh, Hiroaki ^{[2
]}

Danno, Katsunori ^{[2
]}

Suzuki, Hiroshi ^{[2
]}

Bessho, Takeshi ^{[2
]}

Kawai, Yoichiro ^{[2
]}

Shibata, Noriyoshi ^{[1
]}

机构：

[1] Japan Fine Ceram Ctr, Nagoya, Aichi 4568587, Japan

[2] Toyota Motor Co Ltd, Higashifuji Tech Ctr, Shizuoka 4101193, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 04期

关键词：

BEAM-INDUCED CURRENT; N-TYPE;

D O I：

10.1143/JJAP.51.041301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dislocation structure that forms the caterpillar-shaped etch pit upon molten KOH etching is investigated by transmission electron microscopy employing a weak-beam dark-field method. The observed dislocation has the Burgers vector 1/3[(1) over bar2 (1) over bar0], and its structure was transformed from a basal plane dislocation to a threading edge dislocation. In the basal plane dislocation region, it propagated parallel to the [10 (1) over bar0] direction. On the basis of the measured dislocation structure, the caterpillar pit formation is explained. The process of dislocation formation is discussed by analyzing the relationship between sample types and the detection of the caterpillar pits. (C) 2012 The Japan Society of Applied Physics

引用

页数：4

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