Transmission Gate-Based 8T SRAM Cell for Biomedical Applications

被引：1

作者：

Aswini, Valluri ^{[1
]}

Musala, Sarada ^{[1
]}

Srinivasulu, Avireni ^{[2
]}

机构：

[1] Vignans Fdn Sci Technol & Res Deemed Univ, Dept ECE, Guntur, Andhra Pradesh, India

[2] JECRC Univ, Dept Elect & Commun Engn, Jaipur 303905, Rajasthan, India

来源：

2021 12TH INTERNATIONAL SYMPOSIUM ON ADVANCED TOPICS IN ELECTRICAL ENGINEERING (ATEE) | 2021年

关键词：

SRAM; Biomedical Systems; Sub-threshold; Transmission Gate; Stability; 45-nm Technology; SUBTHRESHOLD SRAM; SCHEME;

D O I：

10.1109/ATEE52255.2021.9425314

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

There is an immense necessity of several kB of embedded memory for Biomedical systems which typically operate in the sub-threshold domain with perfect efficiency. SRAMs dominates the total power consumption and the overall silicon area, as 70% of the die has been occupied by them. This brief proposes the design of a Transmission gate based SRAM cell for Biomedical applications eliminating the use of peripheral circuitry during the read operation. This topology offers smaller area, reduced delay, low power consumption and improved data stability in the read operation. The cell is implemented in 45nm CMOS technology operated at 0.45 V.

引用

页数：7

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