Estimation of Threshold Voltage Shift in a-IGZO TFTs under Different Bias Temperature Stress by Improved Stretched-Exponential Equation

被引：0
|
作者：
Ju, Xin [1 ]
Xiao, Xiang [1 ]
Xiao, Yuxiang [1 ]
Zhang, Shengdong [1 ]
机构：
[1] Peking Univ, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China
来源：
2016 23RD INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD) | 2016年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we study threshold voltage (V-th) shift degradation in amorphous IGZO (a-IGZO) TFTs. The TFTs employ the bottom-gate staggered structure with an etch stopped layer. An improvement is presented to well known stretched-exponential equation for the V-th shift, and a systematic extraction method is provided. The V-th shift in a-IGZO TFTs is estimated quantitatively under different gate bias stress and temperature. Good agreements are obtained between calculated results and measured data.
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页码：149 / 152
页数：4
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