A model for threshold voltage shift under negative gate bias stress in amorphous InGaZnO thin film transistors

In the amorphous InGaZnO thin film transistors (a-IGZO TFTs) with high concentration of oxygen vacancy, the energy level of oxygen vacancy-related donor-like states in a-IGZO films near the gate insulator moves upwards under the negative gate bias stress (NGBS). The electrons in the donor-like states above the midgap are emitted to the conduction band, making the donor-like states positively charged. These positively charged donor-like states accumulate near the interface of the a-IGZO films and gate insulator and screen the gate voltage, thus leading to the negative shift of the threshold voltage (V-th) of a-IGZO TFTs. In this article we establish a physical model of V-th shift in the negative direction under NGBS, and the results are consistent with the experimental results.