A new substrate network model and parameter extraction for RF nano-CMOS

被引:0
|
作者
Choi, Gil-Bok [1 ]
Hong, Seung-Ho [1 ]
Kang, Hee-Sung [2 ]
Jeong, Yoon-Ha [1 ]
机构
[1] Pohang Univ Sci & Technol, Dept Elect & Elect Engn, Hyoja Dong, Pohang, Gyungbuk, South Korea
[2] Samsung Elect Co Ltd, Syst LSI Div, Gyeonggi, South Korea
关键词
nano-CMOS; substrate model; RF modeling;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new substrate network model for RF nano-CMOS and a parameter extraction method are proposed here. The model is composed of two resistances and one capacitance to accurately predict high frequency characteristics of nano-CMOS. The parameters are extracted and optimized both analytically and empirically using Z-parameter and Y-parameter analysis. A comparison between a conventional model and the proposed model shows that the proposed model is better in accuracy than conventional model. The measured and simulated data using the proposed model are in strong agreement up to 40.1 GHz.
引用
收藏
页码:508 / +
页数:2
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